A CMOS structure using beam-recrystallized polysilicon

A new CMOS structure has been fabricated with the p-channel transistors in a layer of recrystallized polysilicon and the n-channel transistors in adjacent, laterally displaced regions of the underlying single-crystal silicon. The process allows the use of existing circuit layouts with only minor, if any, modification. Moderate quality transistors are fabricated in a layer of recrystallized polysilicon without degrading the characteristics of high-quality transistors simultaneously formed in the substrate. The oscillation period of ring oscillators is close to that calculated, and varies with the transistor dimensions in the expected manner.