Modulation-doped AlGaAs/GaAs heterostructure charge coupled devices

The advantages of the modulation-doped heterostructure over conventional materials structures for high speed CCD applications are outlined. In addition, the first demonstration of charge transfer in a modulation-doped AlGaAs/GaAs heterojunction is reported. A ten cell, three phase Schottky barrier gate CCD was fabricated using this structure and operated as a shift register. The details of the device fabrication and characterization are presented.