GaAs MESFET's with partial p-type drain regions

The use of a localized p-type region in the drain of a GaAs MESFET has been studied. Holes injected from this p-region compensate the negative space charge region at the channel-substrate interface, minimizing undesirable substrate effects. The MESFET's fabricated with p-type drain regions (called p-FET's) exhibited I-V characteristics with less hysteresis and low light sensitivity compared to standard n-type drain MESFET's. Also, less backgating effect has been observed in these p-FET's than in standard MESFET's.