An In0.53Ga0.47As p-channel MOSFET with plasma-grown native oxide insulated gate

We describe the operation of an In
0.53
Ga
0.47
As p-channel inversion mode MOSFET with plasma grown native oxide insulated gate. This device exhibits a transconductance of 4 mS/mm and an effective channel mobility of more than 50% of the bulk hole mobility. This device is the first demonstration of a native oxide insulated gate MOSFET in the In
1-x
Ga
x
As
y
P
1-y
material system.