High efficiency a-Si:H p-i-n solar cell using a SnO2/glass substrate

Dependence of conversion efficiency of a-Si:H p-i-n solar cells on the material of transparent conductive film substrates was studied. Irrespective of preparation method of the transparent conductive film, SnO
2
films gave an advantage over ITO films for high efficiency cell production by a parallel plate electrode type plasma C.V.D. equipment. A conversion efficiency of 7.19% was achieved by optimizing preparation conditions of the SnO
2
film and the a-Si:H film.