Hot-electron limited operating voltages for 0.8-µm MOSFET's

The maximum allowable operating voltage limited by hot-electrons for 0.8-µm MOSFET's, V
GS
= V
DS
, is determined to be 5.5 V at room temperature with V
SUB
= -2 V, as a result of long-term stress aging. Slow and fast threshold-voltage shifts are observed depending on stress conditions, i.e., the amount of hot-electrons injected into the gate SiO
2
. Generation of interface trapped charges at the Si-SiO
2
interface near the drain junction is suggested as a main cause for degradation.