Buried-channel GaAs MESFET's on MBE material: Scattering parameters and intermodulation signal distortion

Buried-channel GaAs MESFET's (BFET's) on MBE material have been fabricated. The bias dependence of the scattering parameters is strongly reduced applying the BFET principle. As a result the third-order intermodulation products are the smallest reported thus far,-45 dBm at an input power level of 8 dBm. These data are compared with those of VPE fabricated devices. The technology as well as the fabrication of the MBE layers is described.