First-order modeling of oxide-isolated ISL

A model is derived for an oxide-isolated ISL gate with 3-µm minimum details and fan-out = 4. The model includes an n-p-n transistor, a p-n-p transistor, a silicon diode, and four Schottky-barrier diodes. Special attention is paid to all temperature coefficients of the device parameters. Very good agreement is obtained with measurements in the temperature range from 25 to 125°C. Due to the p
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channel-stopper in the process, the collector series resistance of the clamp p-n-p is relatively small.