In0.53Ga0.47As/Si3N4n-channel and p-channel inversion mode MISFET's

We describe the operation of both n-channel and p-channel Si
3
N
4
insulated gate In
0.53
Ga
0.47
As inversion mode MISFET's. These devices exhibit a maximum transconductance of 4mS/mm which represents a significant improvement over previously reported In
0.53
Ga
0.47
As MISFET results.