Detailed performance characteristics of hybrid InP-InGaAsP APD's

Detailed performance characteristics of hybrid InP-InGaAsP APD's having negligible dark current (I
D
< 6 nA at M = 30) are reported. The excess noise factor F is found to be given by F/M ≈ const ≈ 0.42 ± 0.10 for gains in the range 5 ≤ M ≤ 35. The breakdown voltage increases with temperature according to Δ
V_{BD}/V_{BD}
/ΔT = 1.0 × 10
^-3
/°C. The dark current near breakdown doubles every 15°C. Sub-nanosecond rise times are observed, however, fall times are extended to ∼3 nsec by a diffusion tail that will be difficult to completely eliminate.