Gunn oscillation in GaAs optically triggered by 1.06 µm radiation

Gunn oscillation triggered by 1.06 µm radiation in an MO-CVD grown GaAlAs-GaAs heterostructure is reported. In these devices, oscillations were found to occur in two separate ranges of bias voltage. The frequency of operation as well as the probability of the initiation of oscillation were found to be dependent upon the excitation beam location.