Low-leakage, high-efficiency, reliable VPE InGaAs 1.0-1.7 µm photodiodes

High-quality InGaAs vapor-grown photodetectors for the 1.0-1.7 µm spectral region with a 100 µm diameter active area, ∼10-30 nA leakage current, 65-75 V breakdown voltage, 60-80% quantum efficiency, < 0.5 ns pulse rise time, < 1 pW/Hz
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noise equivalent power and stable leakage current at 60°C for over 4000 hours are described.