Resistivity increase in MBE Ga0.47In0.53As following ion bombardment

Resistivity increase was compared following various doses of different 100 kV ions implanted into Ga
0.47
In
0.53
As. The largest resistivity increase of n-type Ge doped GaInAs resulted from a boron ion implant, and increased to a total of 280 times the original resistivity after heating for 15 minutes at 200°C. Boron ion bombardment can be used to isolate devices in a planar GaInAs integrated circuit process.