Ge3N4-InP MIS structures

MIS structures were fabricated by the low temperature pyrolytic deposition of Ge
3
N
4
on n-InP. The interface characteristics of the devices were found to depend on Ge
3
N
4
deposition parameters. For optimum deposition conditions, C-V and G-V measurements suggest the presence of an average interface state density of (2-4-) × 10
¹¹
cm
^-2
ev
^-1
with a time constant of 8 µs. No major hysteresis was observed in the C-V plot and the data indicates some inversion charge build-up under the application of large negative bias which could be useful for the fabrication of inversion mode MISFET's.