Integrated double heterostructure Ga0.47In0.53As photoreceiver with automatic gain control

The first operation of an integrated differential notch-type photoconductor and dual gate (DG) double heterostructure (DH) MESFET in Ga
0.47
In
0.53
As is reported. The starting material was grown by molecular beam epitaxy on a semi-insulating InP substrate. A 2 mW HeNe laser with a spot diameter Of 0.5 mm could modulate the drain current by 300 µA with the upper gate suitably biased.