An improvement of the interface properties of plasma anodized SiO2/Si system for the fabrication of MOSFET's

A new annealing process in chlorine ambient produced by passing argon through a CCl
4
container for reducing the interface states of the plasma anodized SiO
2
/Si system was developed. At optimum annealing conditions, the interface state density was reduced to about 10
10
states/eV . cm
²
. Application of the oxide to the fabrication of MOSFET's shows that the devices obtained have lower threshold voltage and higher mobility than those fabricated with thermal oxidation in dry oxygen.