Low leakage current GaAs diodes

Diodes were formed by Mg ion implantation into n-epitaxial GaAs layers on n
⁺
Substrates. Deep level transient spectroscopy (DLTS) measurements gave trap densities around 10
¹²
cm
^-3
in the epilayers. The reverse-biased junction currents were in the low-to-mid 10
^-9
A/cm
²
range at 10-V bias and the diodes had breakdown voltages as high as 250 V.