1/f noise in (BaSr) TiO3(barrier-dominated contact noise)

Contrary to other semiconductors, the doped barium-strontium titanate shows a region with quite high positive temperature coefficient of resistivity. It is caused by potential barriers whose height depends on temperature via the temperature dependence of permittivity. A new model has been developed for calculating the fluctuation of total resistance considering the particular properties of the barrier. The model is compared to others in which constriction or a poor-conducting uniform layer determines the resistance.