Performance of monolithic GaAs FET oscillators at J-band

Monolithic GaAs FET oscillators were demonstrated at J-band frequencies. Output power up to 160 mW with 23-percent efficiency at 12 GHz was achieved. With a discrete tuning varactor, a 300-µm gate-width FET monolithic oscillator was tuned from 16 to 20 GHz. The average output power was l0 mW.