Theoretical study of a channel-doped separate gate Si MOSFET (SG-MOSFET) by two-dimensional computer simulation

A new device structure is proposed for Si MOSFET, featuring an insulated gate structure, channel doping, and finite spacing between gate and source and between gate and drain. Two-dimensional numerical analysis shows that punchthrough is suppressed and that minimum gate length, limited bypunchthrough or V
T
shift, is extended into the submicrometer range.