Characteristics of CO2deposited SIPOS films

The current-voltage characteristics of CO
2
CVD SIPOS films were studied. Structures have been used in which the low-field and high-field conduction regimes were covered. The conduction mechanism corresponds to the general symmetrical Schottky-barrier model with a modified number of grains parameter. It has been shown that the high-field regime (2 × 10
⁵
V/cm) is characterized by nonohmic behavior, which is an important design factor in the design of high-voltage SIPOS passivated devices.