Measurement of heavy doping parameters in silicon by electron-beam-induced current

Limits on the magnitude of bandgap narrowing and Auger recombination in heavily phosphorus-diffused silicon layers ∼ 10
²⁰
cm
^-3
have been measured by electron-beam-induced current. It is determined that the slope of the bandgap narrowing versus doping must be nearly zero above 3 × 10
¹⁹
cm
^-3
to be consistent with previous data at lower doping levels. It is also shown that the low-level minority-carrier lifetime in these layers is consistent only with an Auger recombination coefficient
C_{N} < 0.4 \times 10^{-31}
cm
⁶
/s.