n-channel MOS transistors in mercury—cadmium—telluride

n-channel MOS transistors operating at 77 K have been realized in Hg
0.71
Cd
0.29
Te with ion-implanted source and drain junctions. Enhancement-mode transistors were made with evaporated ZnS as a gate insulator, and depletion-mode transistors were made using a native oxide of mercury-cadmium-telluride. The devices exhibit surface mobility as high as 1.5 × 10
⁴
cm
²
. V
^-1
. s
^-1
. Current-voltage characteristics and capacitance-voltage data are presented and analyzed.