GaAlAs/GaAs heterojunction Schottky barrier gate CCD

A buried channel Schottky barrier gate GaAlAs/GaAs CCD is described. Device structures, fabrication techniques and results are discussed. Charge transfer efficiency of 0.9993 per transfer has been measured on these 30 gate (10 pixel) CCDs. Dark current was found to be about an order of magnitude lower in GaAlAs than in GaAs. The best Ga
.78
Al
.22
As device has between 2 to 4nA/cm
²
at room temperature.