Gunn-effect inhibitor and its application to high-speed carry finding device

A new type of Gunn-effect inhibitor and a high-speed carry finding device for 8-bit binary adder using the inhibitors are described. The inhibitor is an integration of a Schottky-electrode-triggered Gunn element, a MESFET, and a resistor. The inhibitor retains the high-speed property of, and the operational margin whatsoever owned by the Schottky-electrode-triggered Gunn element. The high-speed carry finding device was made monolithically integrated on a GaAs epi-layer. A novel means employing Schottky barriers is used in the interconnection of the inhibitors. With such means, a signal can be processed with good efficiency and enough operational margin. Experimental results showed that carry signals could be found at the rate of 20 ps/inhibitor. The anode-voltage margin of the whole device was 7 percent.