Efficient modeling of thyristor static characteristics from device fabrication data

A method for determination of the dc characteristics of an n-p-n-p structure is described. Each of the three diffused regions is first of all characterized by computer analysis using the variable boundary regional approach at one low-bias value (mobility variation with doping level and high doping bandgap reduction effects are included in this program). A set of constants thus obtained is used to define a set of simplified analytic
I-V
relations for each of the four regions. These analytic relations are solved using an elementary program to predict the
I-V
characteristics. Experimental and computed results are included for normal and gold-doped devices and explanations for operation with extreme (low- and high-) lifetime values are given.