H-MOS reliability

H-MOS is a new high-performance n-channel technology with a 1-pJ speed power product. This technology is the result of scaling MOS device dimensions. The effect of thinner oxide integrity and hot electron injection are investigated. A screening technique for thin oxides using high-voltage stressing is presented. Threshold shifts due to hot electron injection were observed to be less than 1 mV. Operating lifetest data predict a failure rate of 0.017 percent/1000 h on 4K static RAM's built on H-MOS.