Model and performance of hot-electron MOS transistors for high-speed, low power LSI

An analytical model is presented for a MOS transistor, whose channel length L is so short that the product of L and the hot-electron critical field E
C
is smaller than the operating voltages. Static and dynamic charateristics are tested, in particular by using an SEM in the stroboscopic voltage contrast mode. Simple expressions for transconductance, output resistance, available voltage gain, input capacitance, supply and threshold voltage, noise margins, power and delay allow quantitative scaling into the submicron regime.