An analytical model for the edge-illuminated silicon solar cell under concentrated sunlight

An analytical model for the edge-illuminated p
⁺
nn
⁺
silicon solar cell is presented. The model employs the Fletcher boundary conditions for the p
⁺
n and nn
⁺
space-charge regions and the ambipolar approach for the low region, the lightly-doped n-type base region. For high-level conditions, the ambipolar approach yields complete information about the low region, including the ohmic drop, the Dember voltage, and the hole concentration profile.