A complementary DMOS-VMOS IC structure

A new complementary MOS structure has been fabricated consisting of a p-channel DMOS transistor and an n-channel double-diffused VMOS transistor. The transconductance of each transistor was between 0.85-0.98 of the theoretical g
m
. The threshold voltages have been adjusted by either ion implantation or by adjusting the diffusion profiles. The inverter operation is similar to that of standard CMOS.