Thermal-oxide gate GaAs MOSFET's

The first thermal-oxide gate GaAs MOSFET of the deep-depletion mode is reported. The gate oxide, which has been grown by the new GaAs oxidation technique in the As
2
O
3
vapor, is so chemically stable that it can be subjected to the fabrication process. Measurement of some dc characteristics of the device fabricated has shown a strikingly suppressed hysteresis.