Bias-assisted photoemission in the 1-2 micron range

Experimental photoemission data are presented on a new type of bias-assisted photocathode employing the transferred-electron effect. The cathodes are heterostructures employing lattice-matched InP-InGaAsP alloys. Reflection mode yields up to 1.0% out to 1.7-micron threshold have been achieved in an ultra-high vacuum experimental photoemission system.