Variability study and design considerations of p-n junction hyperabrupt varactor diodes

Variability analysis of the hyperabrupt epitaxial p-n junction varactor diode has been carried out. Results are given for the dependence of the electrical parameters on the various physical parameters of the device. A comparison has been made between a Schottky hyperabrupt varactor and a p-n junction hyperabrupt varactor, and the undesirable effects of the impurity compensation in the latter case are clearly brought out.