Performance improvements of complementary dynamic MOS (CODYMOS) frequency dividers with polysilicon source and drain contacts

A description of a silicon-gate complementary MOS structure with polysilicon source and drain contacts is presented. Only seven masks are required due to the utilization of doped oxides for the simultaneous diffusion of the p
⁺
and n
⁺
source and drain regions. The gate of one MOS transistor may be connected directly with the drain of an adjacent transistor of the same type. Circuits using minimum-width transistors and junction depths of approximately 0.5 µm have been fabricated with no loss of yield. Applying the technology to dynamic CMOS frequency dividers (CODYMOS) has resulted in a 40-percent reduction of dynamic power consumption.