MNOS LSI memory device data retention measurements and projections

The retention characteristics of an MNOS LSI memory device are interpreted from the properties of its basic MNOS transistor. A technique is developed for measuring and predicting retention properties of large quantity device lots. A production lot test method for determining the 10 000-h data retention properties of LSI memory devices is proposed. Also included in the paper are measured failure rates, identifying the retention failures and reliability for a specific LSI memory device.