A first order theory of the p+-n-n+edge-illuminated silicon solar cell at very high injection levels

A first order theory of the edge-illuminated p
⁺
-n-n
⁺
silicon solar cell under very high injection levels has been derived. The very high injection level illuminated
J-V
characteristic is derived for any general base width to diffusion length (
W/L
) ratio and it includes the minority carrier reflection by the n-n
⁺
high-low junction. The beneficial effects of the high-low junction are shown to be significant until extremely high injection levels are reached. The theoretical dependencies of J
sc
and V
oc
on temperature, incident intensity, and base resistivity are derived and discussed in detail. Some experimental results are given and these are discussed in relation to the theory.