Design of transferred-electron amplifiers with good frequency stability

An experimental and theoretical investigation has been conducted into the frequency stability, with respect to temperature, bias voltage, and microwave power variation, of transferred-electron amplifiers with various doping profiles. Devices with a cathode doping-notch which is large enough to cause a flat electric-field distribution at the working point show the best frequency stability. This behavior is associated with the predominance of a frequency-independent negative-conductor behavior in this type of device.