Investigation of the aging processes of the p-n junction based on a single dislocation

An investigation was made of the effects of aging on diodes based on 60° dislocations. The electrical properties of the dislocation p-n junctions showed good stability and were unaffected by the Cottrell impurity atmosphere. This property suggests that there are practical uses for semiconductor devices based on the principle of dislocations. A proposed assembly of the diode based on a single 60° dislocation is described.