Saturation velocity of electrons in GaAs

The saturation velocity of electrons in n-GaAs has been deduced from the v/E characteristic over a temperature range 130-400 K. The experimental values are compared with those predicted by a model assuming the velocity to be limited by intervalley scattering in the (100) valleys. The agreement between theory and experiment is very good if a value of 0.42n10 is used for the effective mass in the (100) valleys.