Effects of ionizing radiation on short-channel thin-Oxide (200-Å) MOSFET's

The effect of ionizing radiation on n-channel MOSFET's with channel lengths ranging from 1.0 to 9.3 µm and gate oxides 200 Å thick was investigated. Irradiation to 10
⁶
rads(Si) resulted in an increased shift of the threshold voltage as the channel length was shortened with those devices having channel lengths 2 µm continuing to operate in the enhancement mode.