10-W and 12-W GaAs IMPATT's

Hi-lo and lo-hi-lo GaAs Schottky-barrier IMPATT diodes have generated CW power outputs over 12 and 10 W, respectively, at 6 GHz. Noise measurements indicate a decreasing FM noise measure with increasing power output. The diodes are less susceptible to tuning-induced burnout than are flat-profile GaAs Impatts, having repeatedly survived input power surges over 70 W.