Design for silicon infrared sensing MOSFET

A design is described for an infrared sensing MOSFET (IRFET). The high-gain high-resolution dc or static readout and inherent integrating and memory characteristics of the infrared sensing MOSFET should make it ideal for infrared imaging and target tracking applications employing a large-scale integrated array. The devices are based on silicon MOSFET technology where large-scale integrated arrays are routinely fabricated.