Surface mobility of electrons of low-mobility semiconductor films in electroacoustic amplifiers

The behavior of the surface mobility of electrons of low-mobility semiconductor films in electroacoustic amplifiers is qualitatively explained by the polycrystalline inhomogeneous film model and the presence of the trapping states. It is postulated that the presence of a positively biased metallic film on the opposite face of the substrate will yield enhanced and yet controllable mobilities.