The effects of temperature on epitaxial InP transferred electron devices

The performance of Indium Phosphide microwave oscillators is examined over the temperature range 110-470 K. The threshold field of the devices is shown to vary from 7 kV.cm
^-1
at 110 K up to 10 kV. cm
^-1
at 470 K, with a value of 8 kV.cm
^-1
at room temperature. The results indicate little falloff in the operating efficiency of the oscillators between room temperature and 470 K. The operating frequency bands are shown to fall with increasing temperature with the frequency for maximum power changing by about 18 percent over the range 290-470 K.