Accumulation effects in an amorphous chalcogenide thin-film switch

A Te-As-Si-Ge thin-film switch has been investigated by pulse program measurements. Switching occurs after a certain delay time, during which the energy necessary for switching is accumulated. Increasing the pressure applied to the devices leads to a decrease of the switching energy. After removal of the voltage, the device will return to the low-conduction state after a recovery time. Two effects are detected: one enables and the other disables the following pulses, if a first pulse with switching has occurred. A current density of 10
⁸
A/cm
²
in the high-conduction state probably leads to liquidification of the conduction channel. The device operates more than 10
¹⁰
times without any failure. The diode construction is described.