A nonlinear lumped network model of semiconductor devices with consideration of recombination kinetics

A nonlinear lumped network model of semiconductor devices with consideration of recombination kinetics is developed. A distributed system, based on a set of recombination kinetic equations for the multiple energy level centers, in addition to continuity, current flow relationships, and Poisson's equation, is shown to be approximated by a lumped RC network. As an example of application, the forward characteristics of a gold-doped silicon diode are calculated. The calculated results are found to be in good agreement with the experimental results within the range where the recombination current through gold centers is dominant.