Trapped plasma oscillations in unipolar semiconductor structures

Based on the results of a large-signal computer simulation, a trapped plasma mode of oscillation is described in an n+-n-n+ silicon structure. The mechanism is similar to TRAPATT in many ways, but relies upon space-charge injection of majority carriers rather than a depletion region for the necessary initial electric field profile. A necessary design criteria of
N_{d}L < 10^{12}
cm
^-2
is established.