The spatial variation of the quasi-Fermi potentials in reverse-biased p+-n junctions and its implications in transition region capacitance calculations

The spatial variation of the quasi-Fermi potentials in asymmetrical step p
⁺
-n junctions under reverse bias conditions is analyzed following an approximate procedure already described in the literature for the symmetrical junctions. The results obtained in this analysis are used to check the validity of the quasi-equilibrium approximation in capacitance calculations.