On the field-effect transistor characteristics

A theoretical analysis demonstrates that the relationship between I
D
and V
DS
for one value of V
GS
is sufficient to completely describe the device behavior for any channel impurity profile. A simple graphical procedure is given to generate a complete set of characteristics from the results at one value of V
GS
. Measurements on an
n
-channel FET are given to support the theoretical conclusion and to demonstrate the graphical technique.