Uniform MBE growth of N-AlInAs/InGaAs heterostructures on 3-inch InP substrates and HEMT fabrication

It is shown that extremely uniform epitaxial growth of AlInAs/InGaAs selectively doped heterostructures can be achieved on 3-in InP substrates using an In-solder-free holder. The variation in the electron mobility and sheet electron density over a 3-in wafer is within +or-1%. The standard deviation of threshold voltage for HEMTs fabricated on the epitaxial wafer is 26 mV for a threshold voltage of -0.80 V. The uniformity obtained is acceptable for LSI fabrication.<
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